AP75N02DF

20V N-Channel Enhancement Mode MOSFET

AP75N02DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V

-

-

1

μA

IGSS

Gate to Body Leakage Current

VGS= ±12V, VDS=0V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

0.5

0.68

1.0

V

RDS(on)

Static Drain-Source On-Resistance note3

VGS=4.5V, ID=30A

-

2.95

3.7

mΩ

VGS=2.5V, ID=20A

4.0

6.0

Ciss

Input Capacitance

VDS=10V, VGS=0V,

f=1.0MHz

-

3200

-

pF

Coss

Output Capacitance

-

460

-

pF

Crss

Reverse Transfer Capacitance

-

445

-

pF

Qg

Total Gate Charge

VDS=10V, ID=30A,

VGS=4.5V

-

48

-

nC

Qgs

Gate-Source Charge

-

3.6

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

19

-

nC

td(on)

Turn-On Delay Time

VDS =10V, ID=30A,

RG=1.8Ω, VGS=4.5V

-

9.7

-

ns

tr

Turn-On Rise Time

-

37

-

ns

td(off)

Turn-Off Delay Time

-

63

-

ns

tf

Turn-Off Fall Time

-

52

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

90

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

360

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, ISD=30A,

TJ=25℃

-

-

1.2

V

trr

Reverse Recovery Time

TJ=25°C, IF=30A, di/dt

=100A/μs

-

23

-

ns

Qrr

Reverse Recovery Charge

-

10

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The EAS condition: TJ=25℃, VDD=15V, VG=4.5V, RG=25Ω, L=0.5mH, IAS=21A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.