AP75N03DF

30V N-Channel Enhancement Mode MOSFET

AP75N03DF RVE1.0

永源微電子科技有限公司

Description

The AP75N03DF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =75A

RDS(ON) < 5.8mΩ @ VGS=10V （Type：3.8mΩ）

Ciss≈1010 PF

Application

Buck

Boost

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP75N03DF

PDFN3*3-8L

AP75N03DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

75

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

32

A

IDM

Pulsed Drain Current

300

A

EAS

Single Pulsed Avalanche Energy

28.8

mJ

IAS

Avalanche Current

24

A

PD@TC=25

℃

Power Dissipation

24

W

RθJA

Thermal Resistance Junction-Ambient 1

85

°C/W

RθJC

Thermal Resistance, Junction to Case

5.2

℃/W

TJ TSTG

Operating Junction Temperature Range

-55 to 150

°C