AP75N03DF

30V N-Channel Enhancement Mode MOSFET

AP75N03DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

30

-

-

V

lGSS

Gate-body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = 30V, VGS = 0V

-

-

1

μA

Zero Gate Voltage Drain Current TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

1.2

1.6

2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS = 10V, ID = 20A

-

3.8

5.8

mΩ

VGS = 4.5V, ID =10A

-

5.2

9.0

gfs

Forward Transconductance4

VDS = 10V, ID = 20A

-

70

-

S

Ciss

Input Capacitance

VDS = 15V, VGS =0V, f

=1MHz

-

1010

-

pF

Coss

Output Capacitance

-

420

-

Crss

Reverse Transfer Capacitance

-

46

-

Rg

Gate Resistance

f = 1MHz

-

2.2

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 15V, ID=

20A

-

16

-

nC

Qgs

Gate-Source Charge

-

3

-

Qgd

Gate-Drain Charge

-

3.3

-

td(on)

Turn-On Delay Time

VGS =10V, VDD = 15V, RG =

3Ω, ID= 20A

-

6.3

-

ns

tr

Rise Time

-

3.2

-

td(off)

Turn-Off Delay Time

-

18

-

tf

Fall Time

-

3.6

-

trr

Body Diode Reverse Recovery Time

IF=20A, dl/dt=100A/μs

-

10

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

13.2

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

50

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH,IAS =24A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.