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M29F010B

SUMMARY DESCRIPTION

The M29F010B is a 1 Mbit (128Kb x8) non-volatile

memory that can be read, erased and repro-

grammed. These operations can be performed us-

ing a single 5V supply. On power-up the memory

defaults to its Read mode where it can be read in

the same way as a ROM or EPROM.

The memory is divided into blocks that can be

erased independently so it is possible to preserve

valid data while old data is erased. Each block can

be protected independently to prevent accidental

Program or Erase commands from modifying the

memory. Program and Erase commands are writ-

ten to the Command Interface of the memory. An

on-chip Program/Erase Controller simplifies the

process of programming or erasing the memory by

taking care of all of the special operations that are

required to update the memory contents. The end

of a program or erase operation can be detected

and any error conditions identified. The command

set required to control the memory is consistent

with JEDEC standards.

Chip Enable, Output Enable and Write Enable sig-

nals control the bus operation of the memory.

They allow simple connection to most micropro-

cessors, often without additional logic.

The memory is offered in PLCC32, TSOP32 (8 x

20mm) packages and it is supplied with all the bits

erased (set to ’1’).

In order to meet environmental requirements, ST

ECOPACK packages are Lead-free. The category

of second Level Interconnect is marked on the

package and on the inner box label, in compliance

with JEDEC Standard JESD97.

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.

Symbol

Parameter

Value

Unit

Ambient Operating Temperature (Temperature Range Option 1)

0 to 70

°C

Ambient Operating Temperature (Temperature Range Option 6)

–40 to 85

°C

Ambient Operating Temperature (Temperature Range Option 3)

–40 to 125

°C

Temperature Under Bias

–50 to 125

°C

Storage Temperature

–65 to 150

°C

(2)

Input or Output Voltage

–0.6 to 6

V

Supply Voltage

–0.6 to 6

V

Identification Voltage

–0.6 to 13.5

V

The maximum ratings related to soldering condi-

tions are also marked on the inner box label. ECO-

PACK

is

an

ST

trademark.

ECOPACK

specifications

are

available

at:

www.st.com.

SIGNAL DESCRIPTIONS

See Figure 1, Logic Diagram, and Table 1, Signal

Names, for a brief overview of the signals connect-

ed to this device.

Address Inputs (A0-A16). The Address Inputs

select the cells in the memory array to access dur-

ing Bus Read operations. During Bus Write opera-

tions they control the commands sent to the

Command Interface of the internal state machine.

Data Inputs/Outputs (DQ0-DQ7). The Data In-

puts/Outputs output the data stored at the selected

address during a Bus Read operation. During Bus

Write operations they represent the commands

sent to the Command Interface of the internal state

machine.

Chip Enable (E). The Chip Enable, E, activates

the memory, allowing Bus Read and Bus Write op-

erations to be performed. When Chip Enable is

Output Enable (G). The Output Enable, G, con-

trols the Bus Read operation of the memory.

Write Enable (W). The Write Enable, W, controls

the Bus Write operation of the memory’s Com-

mand Interface.

supplies the power for all operations (Read, Pro-

gram, Erase etc.).

Supply Voltage is less than the Lockout Voltage,