TL05X datasheet(17/67 Pages) STMICROELECTRONICS

17 / 67 page

TL05x, TL05xA

ENHANCED-JFET LOW-OFFSET

OPERATIONAL AMPLIFIERS

SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

VCC+

VCC–

NOTE A: CL includes fixture capacitance.

(see Note A)

Figure 1. Slew Rate, Rise/Fall Time,

and Overshoot Test Circuit

Overshoot

10%

90%

Figure 2. Rise-Time and Overshoot

Waveform

VCC–

VCC+

2 k

Ω

Figure 3. Noise-Voltage Test Circuit

Figure 4. Unity-Gain Bandwidth and

Phase-Margin Test Circuit

VCC–

VCC+

(see Note A)

10 k

Ω

100

Ω

NOTE A: CL includes fixture capacitance.

typical values

Typical values, as presented in this data sheet

represent the median (50% point) of device

parametric performance.

input bias and offset current

At the picoamp-bias-current level typical of the

TL05x and TL05xA, accurate measurement of the

bias current becomes difficult. Not only does this

measurement

require

picoammeter,

but

test-socket leakages easily can exceed the actual device bias currents. To accurately measure these small

currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters

with bias voltages applied, but with no device in the socket. The device then is inserted in the socket, and a

second test that measures both the socket leakage and the device input bias current is performed. The two

measurements then are subtracted algebraically to determine the bias current of the device.

noise

Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage

density is sample tested at f = 1 kHz. Texas Instruments also has additional noise-testing capability to meet

specific application requirements. Please contact the factory for details.

Figure 5. Input-Bias and Offset-Current Test Circuit

VCC+

VCC–

Ground Shield

TL05X 数据表(PDF) 17 Page - STMicroelectronics

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