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M29F512B 数据表(PDF) 4 Page - STMicroelectronics

部件名 M29F512B
功能描述  512 Kbit 64Kb x8, Bulk Single Supply Flash Memory
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29F512B 数据表(HTML) 4 Page - STMicroelectronics

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Table 3. Bus Operations
Note: X = VIL or VIH.
Operation
E
G
W
Address Inputs
Data
Inputs/Outputs
Bus Read
VIL
VIL
VIH
Cell Address
Data Output
Bus Write
VIL
VIH
VIL
Command Address
Data Input
Output Disable
X
VIH
VIH
XHi-Z
Standby
VIH
XX
X
Hi-Z
Read Manufacturer
Code
VIL
VIL
VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
20h
Read Device Code
VIL
VIL
VIH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
24h
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, VIH.
Standby. When Chip Enable is High, VIH, the
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high-imped-
ance state. To reduce the Supply Current to the
Standby Supply Current, ICC2, Chip Enable should
be held within VCC ± 0.2V. For the Standby current
level see Table 9, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, ICC3, for Program or Erase operations un-
til the operation completes.
Automatic Standby. If CMOS levels (VCC ± 0.2V)
are used to drive the bus and the bus is inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, ICC2. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require VID to be applied to some pins.
Electronic Signature. The
memory
has
two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Table 3, Bus Operations.
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The long command sequences
are imposed to maximize data security.
The commands are summarized in Table 4, Com-
mands. Refer to Table 4 in conjunction with the
text descriptions below.
Read/Reset Command. The Read/Reset com-
mand returns the memory to its Read mode where
it behaves like a ROM or EPROM. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Chip Erase operation the memory will take about
10µs to abort the Chip Erase. During the abort pe-
riod no valid data can be read from the memory.
Issuing a Read/Reset command during a Chip
Erase operation will leave invalid data in the mem-
ory.
Auto Select Command. The Auto Select com-
mand is used to read the Manufacturer Code and
the Device Code. Three consecutive Bus Write op-
erations are required to issue the Auto Select com-
mand. Once the Auto Select command is issued
the memory remains in Auto Select mode until an-
other command is issued.



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