AP150P03P

-30V P-Channel Enhancement Mode MOSFET

AP150P03P/T RVE1.0

永源微電子科技有限公司

Description

The AP150P03P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-150A

RDS(ON) <5.5mΩ @ VGS=-10V （Type：3.8mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150P03P

TO-220-3L

AP150P03P XXX YYYY

1000

AP150P03T

TO-263-3L

AP150P03T XXX YYYY

800

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current TC = 25

℃

-150

A

ID@TC=100

℃

Continuous Drain Current TC = 100

℃

-85

A

IDM

Pulsed Drain Current note1

-460

A

EAS

Single Pulsed Avalanche Energy note2

225

mJ

PD

Power Dissipation TC = 25

℃

62.5

W

RθJC

Thermal Resistance, Junction to Case

1.46

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃