AP150P03P

-30V P-Channel Enhancement Mode MOSFET

AP150P03P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-33

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS= -10V, ID= -30A

-

3.8

5.5

mΩ

VGS= -4.5V, ID= -20A

-

5.8

8.2

Ciss

Input Capacitance

VDS= -15V, VGS=0V,

f=1.0MHz

-

9400

-

pF

Coss

Output Capacitance

-

1000

-

pF

Crss

Reverse Transfer Capacitance

-

767

-

pF

Qg

Total Gate Charge

VDS= -15V, ID= -30A,

VGS= -10V

-

42

-

nC

Qgs

Gate-Source Charge

-

8.4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

11.2

-

nC

td(on)

Turn-on Delay Time

VDD= -15V, ID= -30A,

VGS= -10V, RGEN=2.5Ω

-

15

-

ns

tr

Turn-on Rise Time

-

16

-

ns

td(off)

Turn-off Delay Time

-

69

-

ns

tf

Turn-off Fall Time

-

27

-

ns

IS

Maximum Continuous Drain to Source

DiodeForward Current

-

-

-90

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-360

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -30 A

-0.8

-1.2

V

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is TJ =25℃, V DD = -15V, VG = -10V, RG =25Ω, L=0.5mH, IAS=-30A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.