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M29W040 数据表(PDF) 13 Page - STMicroelectronics

部件名 M29W040
功能描述  4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
PDF  31 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29W040 数据表(HTML) 13 Page - STMicroelectronics

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background image
Symbol
Alt
Parameter
M29W040
Unit
-100
-120
VCC = 3.3V
±0.3V
CL = 30pF
VCC = 3.3V
±0.3V
Min
Max
Min
Max
tAVAV
tWC
Address Valid to Next Address Valid
100
120
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
0
0
ns
tWLWH
tWP
Write Enable Low to Write Enable High
45
50
ns
tDVWH
tDS
Input Valid to Write Enable High
45
50
ns
tWHDX
tDH
Write Enable High to Input Transition
0
0
ns
tWHEH
tCH
Write Enable High to Chip Enable High
0
0
ns
tWHWL
tWPH
Write Enable High to Write Enable Low
25
30
ns
tAVWL
tAS
Address Valid to Write Enable Low
0
0
ns
tWLAX
tAH
Write Enable Low to Address Transition
45
50
ns
tGHWL
Output Enable High to Write Enable Low
0
0
ns
tVCHEL
tVCS
VCC High to Chip Enable Low
50
50
µs
tWHQV1
(1)
Write Enable High to Output Valid (Program)
12
12
µs
tWHQV2
(1)
Write Enable High to Output Valid
(Block Erase)
1.5
30
1.5
30
sec
tWHGL
tOEH
Write Enable High to Output Enable Low
0
0
ns
Note: 1. Time is measured to Data Polling or Toggle Bit, tWHQV =tWHQ7V +tQ7VQV.
Table 13A. Write AC Characteristics, Write Enable Controlled
(TA = 0 to 70
°C, –20 to 85°C or –40 to 85°C)
Chip Erase(CE) instruction. This instruction uses
six write cycles. The Erase Set-up command 80h
is written to address 5555h on third cycle after the
two coded cycles. The Chip Erase Confirm com-
mand 10h is written at address5555h on sixth cycle
after another two coded cycles. If the second com-
mand given is not an erase confirm or if the coded
cycles are wrong, the instruction aborts and the
device is reset to Read Array. It is not necessaryto
program the array with 00h first as the P/E.C. will
automatically do this before erasing to FFh. Read
operations after the sixth rising edge of W or E
output the status register bits. During the execu-
tion of the erase by the P/E.C. the memory will not
accept any instruction.
Read of Data Polling bit DQ7 returns ’0’, then ’1’ on
completion. The Toggle Bit DQ6 toggles during
erase operation and stops when erase is com-
pleted. After completion the Status Register bit
DQ5 returns ’1’ if there has been an Erase Failure
because the erasure has not been verified even
after the maximum number of erase cycles have
been executed.
13/31
M29W040



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