HAT1069C datasheet(1/6 Pages) RENESAS

部件名	HAT1069C

功能描述	Silicon P Channel Power MOSFET Power Switching

PDF	6 Pages

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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1 / 6 page

R07DS1169EJ0400 Rev.4.00

Page 1 of 5

Mar 19, 2014

Data Sheet

HAT1069C

Silicon P Channel Power MOS FET

Power Switching

Features

• Low on-resistance

RDS(on) = 38 m

Ω typ (at V

GS = –4.5 V)

• High speed switching

• Capable of 1.8 V gate drive

• High density mounting

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

G

D

S

6

1

5

D

2

D

3

D

4

1

2

3

6

5

4

Index band

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

–12

V

Gate to source voltage

VGSS

±8

V

Drain current

ID

–4

A

Drain peak current

ID(pulse)

Note1

–16

A

Body-drain diode reverse drain current

IDR

–4

A

Channel dissipation

Pch

Note2

900

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 μs, duty cycle ≤ 1%

2. When using the grass epoxy board. (FR4 40

× 40 × 1.6 mm)

R07DS1169EJ0400

(Previous: REJ03G0164-0300)

Rev.4.00

Mar 19, 2014

类似零件编号 - HAT1069C

制造商	部件名	数据表	功能描述
Renesas Technology Corp	HAT1069C	84Kb / 6P	Silicon P Channel Power MOS FET
Renesas Technology Corp	HAT1069C	84Kb / 6P	Silicon P Channel Power MOS FET Power Switching

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