HAT1069C datasheet(3/6 Pages) RENESAS

3 / 6 page

HAT1069C

R07DS1169EJ0400 Rev.4.00

Page 3 of 5

Mar 19, 2014

Main Characteristics

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics

–16

–12

–8

–4

–2

–4

–6

–8

–10

–16

–12

–8

–4

–1

–2

–5

–4

–3

°C

VDS = –10 V

Pulse Test

VGS = –1.8 V

–10 V

–2.5 V

–3 V

–4.5 V

Pulse Test

–2 V

–2.2 V

Tc = –25

°C

Ambient Temperature Ta (

°C)

Power vs. Temperature Derating

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

Note 4: When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm)

1600

1200

800

400

100

150

200

–0.1

–100

–10

–1

–0.1

–0.01

–1

–10

–100

μs

Operation in

this area is

limited by RDS(on)

Ta = 25

°C

1 shot Pulse

1 ms

100

μs

Test Condition:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm)

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–100

–150

–200

–50

–250

–2

–4

–6

–10

–8

Ta = 25

°C

–4.0 A

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

–0.1

–1

–10

1000

100

VGS = –1.8 V

–2.5 V

–4.5 V

Pulse Test

Ta = 25

°C

–1.5 A

–1.0 A

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