AP3401AI

-30V P-Channel Enhancement Mode MOSFET

AP3401AI RVE1.1

永源微電子科技有限公司

Description

The AP3401AI uses advanced Trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-4.8A

RDS(ON) < 50mΩ @ VGS=10V (Type：40mΩ)

RDS(ON) < 55mΩ @ VGS=4.5V (Type：45mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3401AI

SOT23L

A19T

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

-30

V

VGSS

Gate-Source Voltage

±12

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -10V1

-4.8

A

ID@TC=100

℃

Continuous Drain Current, VGS @ -10V1

-3.3

A

IDM

Pulsed Drain Current note1

-20.4

A

PD

Power Dissipation TA = 25

℃

2.15

W

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

104

℃

/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

℃