AP3401AI

-30V P-Channel Enhancement Mode MOSFET

AP3401AI RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-34

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.5

-1.0

-1.5

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS =-10V, ID =-5A

-

40

50

mΩ

RDS(on)

Static Drain-Source on-Resistance note2

VGS =-4.5V, ID =-4A

45

55

mΩ

RDS(on)

Static Drain-Source on-Resistance note2

VGS =-2.5V, ID =-1A

-

55

80

mΩ

Ciss

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

-

745

-

pF

Coss

Output Capacitance

-

70

-

pF

Crss

Reverse Transfer Capacitance

-

57

-

pF

Qg

Total Gate Charge

VDS= -15V, ID = -5.1A,

VGS = -10V

-

8

-

nC

Qgs

Gate-Source Charge

-

1.8

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

2.7

-

nC

td(on)

Turn-on Delay Time

VDD = -15V, ID = -1A,

VGS=-10V, RGEN=2.5Ω

-

7

-

ns

tr

Turn-on Rise Time

-

3

-

ns

td(off)

Turn-off Delay Time

-

30

-

ns

tf

Turn-off Fall Time

-

12

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-4.8

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-16.4

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -5.1A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.