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AP4435A 数据表(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP4435A 数据表(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 9 page ![]() AP4435A 30V P-Channel Enhancement Mode MOSFET AP4435A Rve1.3 永源微電子科技有限公司 0 2 4 6 8 10 12 0 0.25 0.5 0.75 1 -VDS , Drain-to-Source Voltage (V) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 0 4 8 12 0.00 0.25 0.50 0.75 1.00 -VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse diode Fig.4 Gate-charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ |
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