AP8804DF datasheet(1/7 Pages) APME

部件名	AP8804DF

功能描述	20V NN-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP8804DF

20V N+N-Channel Enhancement Mode MOSFET

AP8804DF REV1.0

永源微電子科技有限公司

Description

The AP8804DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =40A

RDS(ON) < 6mΩ @ VGS=4.5V （Type：4.2mΩ）

ESD=2500V HBM

Application

BMS

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP8804DF

QFN3X3-8L

AP8804DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V1

40

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V1

35

A

IDM

Pulsed Drain Current2

120

A

IAS

Avalanche Current

30

A

PD@TA=25℃

Total Power Dissipation1

1.56

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

80

℃

/W

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