AP8804DF

20V N+N-Channel Enhancement Mode MOSFET

AP8804DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

20

22

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=4.5V , ID=3A

4.2

6.0

mΩ

RDS(ON)

Static Drain-Source On-Resistance2

VGS=2.5V , ID=3A

5.5

6.5

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

0.5

0.7

1.2

V

IDSS

Drain-Source Leakage Current

VDS=20V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=20V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±10

uA

gfs

Forward Transconductance

VDS=5V , ID=3A

---

42

---

S

Qg

Total Gate Charge (4.5V)

VDS=10V , ID=3A

---

38

---

nC

Total Gate Charge (3.9V)

---

33

---

Qgs

Gate-Source Charge

---

4.5

---

Qgd

Gate-Drain Charge

---

12

---

Td(on)

Turn-On Delay Time

VDD=10V , VGS=4.5V , RG=6Ω

ID=3A

---

22

---

ns

Tr

Rise Time

---

41

---

Td(off)

Turn-Off Delay Time

---

77

---

Tf

Fall Time

---

21

---

Ciss

Input Capacitance

VDS=10V , VGS=0V , f=1MHz

---

3165

---

pF

Coss

Output Capacitance

---

380

---

Crss

Reverse Transfer Capacitance

---

325

---

IS

Continuous Source Current1

VG=VD=0V , Force Current

---

---

40

A

ISM

Pulsed Source Current2

---

---

100

A

VSD

Diode Forward Voltage2

VGS=0V , IS=3A , TJ=25℃

---

---

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=45V,VGS=10V,L=0.1mH,IAS=30A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.