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M29W004 数据表(PDF) 4 Page - STMicroelectronics |
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M29W004 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 30 page ![]() 16K BOOT BLOCK AI02093 7FFFFh 7C000h 7BFFFh 7A000h 79FFFh 40000h 3FFFFh 8K PARAMETER BLOCK 8K PARAMETER BLOCK 32K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 20000h 1FFFFh 10000h 0FFFFh 00000h M29W004T 64K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 78000h 77FFFh 70000h 6FFFFh 60000h 5FFFFh 50000h 4FFFFh M29W004B 16K BOOT BLOCK 8K PARAMETER BLOCK 8K PARAMETER BLOCK 32K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 64K MAIN BLOCK 40000h 3FFFFh 30000h 2FFFFh 20000h 1FFFFh 7FFFFh 70000h 6FFFFh 60000h 5FFFFh 50000h 4FFFFh 10000h 0FFFFh 08000h 07FFFh 04000h 03FFFh 00000h 64K MAIN BLOCK 06000h 05FFFh 64K MAIN BLOCK 30000h 2FFFFh Figure 3. Memory Map and Block Address Table (x8) Output Enable (G). The Output Enable gates the outputs through the data buffers during a read operation. When G is High the outputs are High impedance. G must be forced to VID level during Block Protection and Unprotection operations. Write Enable (W). This input controls writing to the Command Register and Address and Data latches. Ready/Busy Output (RB). Ready/Busy is an open-drain output and gives the internal state of the P/E.C. of the device. When RB is Low, the device is Busy with a Program or Erase operation and it will not accept any additional program or erase instructions except the Erase Suspend instruction. When RB is High, the device is ready for any Read, Program or Erase operation. The RB will also be High when the memory is put in Erase Suspend or Standby modes. Reset/Block Temporary Unprotect Input (RP). The RP Input provides hardware reset and pro- tected block(s) temporary unprotection functions. Reset of the memory is acheived by pulling RP to VIL for at least tPLPX. When the reset pulse is given, if the memory is in Read or Standby modes, it will be available for new operations in tPHEL after the rising edge of RP. If the memory is in Erase, Erase Suspend or Program modes the reset will take tPLYH during which the RB signal will be held at VIL. The end of the memory reset will be indicated by the rising edge of RB. A hardware reset during an Erase or Program operation will corrupt the data being programmed or the sector(s) being erased. See Table 14 and Figure 9. Temporary block unprotection is made by holding RP at VID. In this condition previously protected blocks can be programmed or erased. The transi- tion of RP from VIH to VID must slower than tPHPHH. When RP is returned from VID to VIH all blocks temporarily unprotected will be again protected. See Table 15 and Figure 9. VCC Supply Voltage. The power supply for all operations (Read, Program and Erase). VSS Ground. VSS is the reference for all voltage measurements. 4/30 M29W004T, M29W004B |
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