APH2N7002AI

60V N-Channel Enhancement Mode MOSFET

APH2N7002AI RVE1.0

永源微電子科技有限公司

Description

The APH2N7002AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =0.3A

RDS(ON) < 2100mΩ @ VGS=10V （Type：1600mΩ）

ESD=2KV HBM

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

APH2N7002AI

SOT23L

72K

3000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

60

V

VGSS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

0.3

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

0.15

A

IDM

Pulsed Drain Current

1

A

PD@TC=25

℃

Power Dissipation

0.38

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

RθJA

Thermal Resistance Junction-Ambient 1

135

℃/W

RθJC

Thermal Resistance Junction-Case1

100

℃/W