APH2N7002AI

60V N-Channel Enhancement Mode MOSFET

APH2N7002AI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= 10μA

60

67

-

V

IDSS

Zero Gate Voltage Drain Current

VDS =60V, VGS = 0V,

-

-

1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±20V

-

-

±10

uA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 250μA

1.0

1.3

2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS =10V, ID =0.3A

-

1600

2100

mΩ

RDS(on)

Static Drain-Source on-Resistance

VGS =4.5V, ID =0.2A

-

1900

2700

mΩ

Ciss

Input Capacitance

VDS = 25V, VGS = 0V, f

= 1.0MHz

-

28

-

pF

Coss

Output Capacitance

-

11

-

pF

Crss

Reverse Transfer Capacitance

-

4

-

pF

Qg

Total Gate Charge

VDS = 10V, ID = 0.3A,

VGS = 4.5V

-

1.7

-

nC

Qgs

Gate-Source Charge

-

0.3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

0.6

-

nC

td(on)

Turn-on Delay Time

VDD = 10V, ID =0.2A,

RGEN = 10Ω,VGS=10V,

-

2

-

ns

tr

Turn-on Rise Time

-

15

-

ns

td(off)

Turn-off Delay Time

-

7

-

ns

tf

Turn-off Fall Time

-

20

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

0.2

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

0.8

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS =0.2A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.