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M36DR232A 数据表(PDF) 20 Page - STMicroelectronics

部件名 M36DR232A
功能描述  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M36DR232A 数据表(HTML) 20 Page - STMicroelectronics

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Table 20. CFI Query System Interface Information
Offset
Data
Description
1Bh
0017h
VCCF Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Ch
0022h
VCCF Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Dh
0000h
VPPF [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no VPP pin is present
1Eh
00C0h
VPPF [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no VPP pin is present
1Fh
0004h
Typical timeout per single byte/word program (multi-byte program count = 1), 2n µs
(if supported; 0000h = not supported)
20h
0000h
Typical timeout for maximum-size multi-byte program or page write, 2n µs
(if supported; 0000h = not supported)
21h
000Ah
Typical timeout per individual block erase, 2n ms
(if supported; 0000h = not supported)
22h
0000h
Typical timeout for full chip erase, 2n ms
(if supported; 0000h = not supported)
23h
0004h
Maximum timeout for byte/word program, 2n times typical (offset 1Fh)
(0000h = not supported)
24h
0000h
Maximum timeout for multi-byte program or page write, 2n times typical (offset 20h)
(0000h = not supported)
25h
0004h
Maximum timeout per individual block erase, 2n times typical (offset 21h)
(0000h = not supported)
26h
0000h
Maximum timeout for chip erase, 2n times typical (offset 22h)
(0000h = not supported)



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