DI017N06PQ

Characteristics (static)

Kennwerte (statisch)

Tj = 25°C

Min.

Typ.

Max.

Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung

ID = 10 mA

VGS = 0 V (short)

V(BR)DSS

60 V

–

–

Drain-Source leakage current – Drain-Source Leckstrom

VDS = 0.8 VDSS

VGS = 0 V (short)

IDSS

–

–

1 µA

Gate-Body leakage current – Gate-Substrat Leckstrom

VGS = ±20 V

VDS = 0 V (short)

IGSS

–

–

± 100 nA

Gate-Source threshold voltage – Gate-Source Schwellspannung

VGS = VDS

ID = 250 µA

VGS(th)

1.2 V

–

2.5 V

Drain-Source on-state resistance – Drain-Source Einschaltwiderstand

VGS = 10 V

ID = 15 A

VGS = 4.5 V

ID = 10 A

RDS(on)

–

28 mΩ

–

33 mΩ

39 mΩ

Characteristics (dynamic)

Kennwerte (dynamisch)

Tj = 25°C

Min.

Typ.

Max.

Forward Transconductance – Übertragungssteilheit

VDS = 5 V

ID = 15 A

gFS

–

18 S

–

Input Capacitance – Eingangskapazität

VDS = 30 V

VGS = 0 V

f = 1 MHz

Ciss

–

1260 pF

–

Output Capacitance – Ausgangskapazität

VDS = 30 V

VGS = 0 V

f = 1 MHz

Coss

–

47 pF

–

Reverse Transfer Capacitance – Rückwirkungskapazität

VDS = 30 V

VGS = 0 V

f = 1 MHz

Crss

–

43 pF

–

Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit

VDD = 30 V ID = 15 A

VGS = 10 V

RG = 3.3 Ω

(Fig. 1)

td(on)

tr

–

11 ns

27 ns

–

Turn-Off Delay & Fall Time – Ausschaltverzögerung und Abfallzeit

VDD = 30 V ID = 15 A

VGS = 0 V

RG = 3.3 Ω

(Fig. 1)

td(off)

tf

–

10 ns

2 ns

–

Total Gate Charge – Gesamte Gate-Ladung

VDD = 30 V ID = 15 A

VGS = 10 V

Qg

–

19 nC

–

Gate-Source Charge – Gate-Source-Ladung

VDD = 30 V ID = 15 A

VGS = 10 V

Qgs

–

4.3 nC

–

Gate-Drain Charge – Gate-Drain-Ladung

VDD = 30 V ID = 15 A

VGS = 10 V

Qgd

–

2.6 nC

–

Intrinsic Gate resistance – Innerer Gatewiderstand

f = 1 Mhz

D open

RGi

–

0.8 Ω

–

2

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t

d(on)

V

GS

90%

10%

V

DS

t

r

t

d(off)

t

f

Fig. 1

Test circuit for switching

times (R) and avalanche

energy (L)

(“rise“ and “fall“ refer to I )

D

Testaufbau für Schaltzeiten (R)

und Avalanche-Energie (L)

(“rise“ und “fall“ beziehen sich auf I

D)

V

GS

R

G

R

V

DS

V

DD

I

D

L