Symbol

Parameter

Test Condition

Min

Max

Unit

(1)

Input Leakage Current

0V

±1

µA

(1)

Output Leakage Current

0V

±5

µA

Supply Current

Outputs open

80

mA

Supply Current (Standby) TTL

3mA

Supply Current (Standby) CMOS

3

mA

(2)

Input Low Voltage

–0.3

0.8

V

Input High Voltage

2.2

V

Output Low Voltage

0.4

V

Output High Voltage

2.4

V

Notes: 1. Outputs deselects.

2. Negative spikes of –1V allowed for up to 10ns once per cycle.

Table 6. DC Characteristics

Symbol

Parameter

Test Condition

Min

Max

Unit

Input Capacitance

10

pF

(3)

Input / Output Capacitance

10

pF

Notes: 1. Effective capacitance measured with power supply at 5V.

2. Sampled only, not 100% tested.

3. Outputs deselected

°C)

Symbol

Parameter

Min

Typ

Max

Unit

Power-fail Deselect Voltage (M48Z08)

4.5

4.6

4.75

V

Power-fail Deselect Voltage (M48Z18)

4.2

4.3

4.5

V

Battery Back-up Switchover Voltage

3.0

V

Expected Data Retention Time

11

YEARS

°C)

For the 28 lead SOIC, the battery package (i.e.

SNAPHAT) part number is "M4Z28-BR00SH1".

The M48Z08/18 also has its own Power-fail Detect

circuit. The control circuitry constantly monitors the

single 5V supply for an out of tolerance condition.

protects the SRAM, providing a high degree of data

security in the midst of unpredictable system op-

approximately 3V, the control circuitry connects the

battery which maintains data until valid power re-

turns.

DESCRIPTION (cont’d)

4/18

M48Z08, M48Z18