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M48Z30 数据表(PDF) 8 Page - STMicroelectronics |
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M48Z30 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 12 page ![]() Symbol Parameter M48Z30 / 30Y Unit -85 -100 Min Max Min Max tAVAV Write Cycle Time 85 100 ns tAVWL Address Valid to Write Enable Low 0 0 ns tAVEL Address Valid to Chip Enable Low 0 0 ns tWLWH Write Enable Pulse Width 65 75 ns tELEH Chip Enable Low to Chip Enable High 75 90 ns tWHAX Write Enable High to Address Transition 5 5 ns tEHAX Chip Enable High to Address Transition 15 15 ns tDVWH Input Valid to Write Enable High 35 40 ns tDVEH Input Valid to Chip Enable High 35 40 ns tWHDX Write Enable High to Input Transition 0 0 ns tEHDX Chip Enable High to Input Transition 15 15 ns tWLQZ (1,2) Write Enable Low to Output Hi-Z 35 35 ns tAVWH Address Valid to Write Enable High 75 80 ns tAVEH Address Valid to Chip Enable High 75 80 ns tWHQX (1,2) Write Enable High to Output Transition 5 5 ns Notes: 1. CL = 5pF (see Figure 4). 2. If E goes low simultaneously with W going low after W going low, the outputs remain in the high-impedance state. Table 9. Write Mode AC Characteristics (TA = 0 to 70 °C; VCC = 4.75V to 5.5V or 4.5V to 5.5V) 8/12 M48Z30, M48Z30Y |
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