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M48Z35AV 数据表(PDF) 8 Page - STMicroelectronics

部件名 M48Z35AV
功能描述  256 Kbit 32Kb x8 ZEROPOWER SRAM
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48Z35AV 数据表(HTML) 8 Page - STMicroelectronics

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M48Z35AY, M48Z35AV
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Table 10. Write Mode AC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 3.0V to 3.6V)
Note: 1. CL = 5pF (see Figure 4).
2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state.
Symbol
Parameter
M48Z35AY
M48Z35AV
Unit
-70
-100
Min
Max
Min
Max
tAVAV
Write Cycle Time
70
100
ns
tAVWL
Address Valid to Write Enable Low
0
0
ns
tAVEL
Address Valid to Chip Enable Low
0
0
ns
tWLWH
Write Enable Pulse Width
50
80
ns
tELEH
Chip Enable Low to Chip Enable High
55
80
ns
tWHAX
Write Enable High to Address Transition
0
10
ns
tEHAX
Chip Enable High to Address Transition
0
10
ns
tDVWH
Input Valid to Write Enable High
30
50
ns
tDVEH
Input Valid to Chip Enable High
30
50
ns
tWHDX
Write Enable High to Input Transition
5
5
ns
tEHDX
Chip Enable High to Input Transition
5
5
ns
tWLQZ
(1, 2)
Write Enable Low to Output Hi-Z
25
50
ns
tAVWH
Address Valid to Write Enable High
60
80
ns
tAVEH
Address Valid to Chip Enable High
60
80
ns
tWHQX
(1, 2)
Write Enable High to Output Transition
5
10
ns
DATA RETENTION MODE
With valid VCC applied, the M48Z35AY/35AV op-
erates as a conventional BYTEWIDE™ static
RAM. Should the supply voltage decay, the RAM
will automatically power-fail deselect, write pro-
tecting itself when VCC falls within the VPFD(max),
VPFD(min) window. All outputs become high im-
pedance, and all inputs are treated as "don't care."
Note: A power failure during a write cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's con-
tent. At voltages below VPFD(min), the user can be
assured the memory will be in a write protected
state, provided the VCC fall time is not less than tF.
The M48Z35AY/35AV may respond to transient
noise spikes on VCC that reach into the deselect
window during the time the device is sampling
VCC. Therefore, decoupling of the power supply
lines is recommended.
When VCC drops below VSO, the control circuit
switches power to the internal battery which pre-
serves data. The internal button cell will maintain
data in the M48Z35AY/35AV for an accumulated
period of at least 10 years (at 25°C) when VCC is
less than VSO.
As system power returns and VCC rises above
VSO, the battery is disconnected, and the power
supply is switched to external VCC. Write protec-
tion continues until VCC reaches VPFD(min) plus
tREC(min). Normal RAM operation can resume
tREC after VCC exceeds VPFD(max).



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