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M491B 数据表(PDF) 5 Page - STMicroelectronics |
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M491B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() 40 12 5 I (mA) Typ. max. 20msec Typ. max. 8msec t (ms) Figure 2 ERASE CYCLE Figure 3 shows the timing and the waveform of the current flowing through Pin 2 during the erase operation. The peak current is 7mA (max) during the erase cycle and 6mA (max) during the read cycle. The typical erase time is 10ms for a new device and increases with the number of modify operations up to 200ms after 1000 cycles. In order to protect the memory in case of failure of some bits the modify operation is stopped after 1sec. READ CYCLE Figure 4 shows the waveform of the current during a read operation. 32 44 256 µs 6mA 7mA 128 µs 52 Figure 3 64 32 44 116 µs 256 µs 40mA 6mA 12mA After about 30msec Figure 1 44 6mA 128 µs 84 µs 480 µs Figure 4 M491B 5/16 |
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