STP20NM50 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

500

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30V

100

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10 A

0.20

0.25

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS > ID(ON) x RDS(ON)max,

ID = 10A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz,

VGS=0

1480

285

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 400V

130

Gate input resistance

f=1MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

1.6

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=400V, ID = 20A

VGS =10V

(see Figure 15)

STP20NM50 数据表(PDF) 4 Page - STMicroelectronics

STP20NM50 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

数据表下载