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STP20NM50 数据表(PDF) 5 Page - STMicroelectronics |
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STP20NM50 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical characteristics 5/14 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=250 V, ID=10A, RG=4.7Ω, VGS=10V (see Figure 14) 24 16 ns ns td(off) tf Turn-off delay time Fall time 40 12 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=400 V, ID=20A, RG=4.7Ω, VGS=10V (see Figure 16) 9 8.5 23 ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 20 80 A A VSD (2) 2. Pulsed: pulse duration 300µs duty cycle 1.5% Forward on voltage ISD=20A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A,di/dt=100A/µs, VDD=100 V, Tj= 25°C (see Figure 16) 350 4.6 26 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=20A,di/dt=100A/µs, VDD=100 V, Tj=150°C (see Figure 16) 435 5.9 27 ns µC A |
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