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M29F200 数据表(PDF) 1 Page - STMicroelectronics |
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M29F200 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 33 page ![]() AI01986 17 A0-A16 W DQ0-DQ14 VCC M29F200T M29F200B E VSS 15 G RP DQ15A–1 BYTE RB Figure 1. Logic Diagram M29F200T M29F200B 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory 5V ±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME –10 µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word – Status Register bits and Ready/Busy Output MEMORY BLOCKS – Boot Block (Top or Bottom location) – Parameter and Main blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTI-BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend LOW POWER CONSUMPTION – Stand-by and Automatic Stand-by 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code, M29F200T: 00D3h – Device Code, M29F200B: 00D4h DESCRIPTION The M29F200 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byteor Word- by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard program- mers. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to make changes in the application. July 1998 1/33 44 1 SO44 (M) TSOP48 (N) 12 x 20 mm |
类似零件编号 - M29F200 |
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类似说明 - M29F200 |
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