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M29F400 数据表(PDF) 19 Page - STMicroelectronics |
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M29F400 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 34 page ![]() Symbol Alt Parameter M29F400T / M29F400B Unit -90 -120 Standard Interface Standard Interface Min Max Min Max tAVAV tWC Address Valid to Next Address Valid 90 120 ns tELWL tCS Chip Enable Low to Write Enable Low 0 0 ns tWLWH tWP Write Enable Low to Write Enable High 45 50 ns tDVWH tDS Input Valid to Write Enable High 45 50 ns tWHDX tDH Write Enable High to Input Transition 0 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 0 ns tWHWL tWPH Write Enable High to Write Enable Low 20 20 ns tAVWL tAS Address Valid to Write Enable Low 0 0 ns tWLAX tAH Write Enable Low to Address Transition 45 50 ns tGHWL Output Enable High to Write Enable Low 0 0 ns tVCHEL tVCS VCC High to Chip Enable Low 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 0 0 ns tPHPHH (1,2) tVIDR RP Rise Time to VID 500 500 ns tPLPX tRP RP Pulse Width 500 500 ns tWHRL (1) tBUSY Program Erase Valid to RB Delay 35 50 ns tPHWL (1) tRSP RP High to Write Enable Low 4 4 µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Table 15B. Write AC Characteristics, Write Enable Controlled (TA =0 to 70 °C, –40 to 85°C or –40 to 125°C) pended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from a block not being erased returns valid data. During suspension the memory will respond only to the Erase Resume ER and the Program PG instruc- tions. A Program operation can be initiated during erase suspend in one of the blocks not being erased. It will result in both DQ2 and DQ6 toggling when the data is being programmed. ARead/Reset command will definitively abort erasure and result in invalid data in the blocks being erased. Erase Resume (ER) Instruction. If an Erase Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. 19/34 M29F400T, M29F400B |
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