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APM32F103RBT6-R 数据表(PDF) 45 Page - Geehy Semiconductor Co., Ltd.

部件名 APM32F103RBT6-R
功能描述  Arm® Cortex® -M3 based 32-bit MCU
PDF  78 Pages
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制造商  GEEHY [Geehy Semiconductor Co., Ltd.]
网页  https://global.geehy.com/
标志 GEEHY - Geehy Semiconductor Co., Ltd.

APM32F103RBT6-R 数据表(HTML) 45 Page - Geehy Semiconductor Co., Ltd.

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P a g e 44
Symbo
Parameter
Condition
Minimum
value
Maximum
value
Unit
current at the same time
2.7V < VDD < 3.6V
VOH(2)
Output high level when 8 pins output
current at the same time
VDD-0.4
-
VOL(1)
Output low level when 8 pins absorbs
current at the same time
CMOS port, IIO = +8mA
2.7V < VDD < 3.6V
-
0.4
V
VOH(2)
Output high level when 8 pins output
current at the same time
2.4
-
VOL(1)(3)
Output low level when 8 pins absorbs
current at the same time
IIO = +20mA
2.7V < VDD < 3.6V
-
1.3
V
VOH(2)(3)
Output high level when 8 pins output
current at the same time
VDD-1.3(4)
-
1.
The current IIO absorbed by I/O must always comply with the absolute maximum rated value
requirements, and the sum of IIO (all I/O and control pins) cannot exceed IVSS.
2.
The current IIO outputted by I/O must always comply with the absolute maximum rated value
requirements, and the sum of I IO (all I/O and control pins) cannot exceed IVDD.
3.
The data are obtained from a comprehensive evaluation and are not tested in production.
4.
The drive capability of PC13-15 is not included in this item. The specification of other PC ports is
3.3V<VDD<3.6V within the voltage range.
5.10
NRST pin characteristics
The NRST pin input drive adopts CMOS process, and is connected with a permanent pull-up
resistor RPU.
Table36 NRST Pin Characteristics (TA=-40~105℃, VDD=3.3V)
Symbol
Parameter
Condition
Minimum
value
Typical
value
Maximum
value
Unit
VIL(NRST)(1)
NRST low-level input voltage
-
-0.5
-
0.8
V
VIH(NRST)(1)
NRST high-level input voltage
-
2
-
VDD+0.5
Vhys(NRST)
NRST Schmitt trigger voltage
hysteresis
-
-
300
-
mV
RPU
Weak pull-up equivalent
resistance (2)
VIN = VSS
32
40
49
1.
Guaranteed by design and not tested in production.
2.
The pull-up resistor is realized by connecting a pure resistor in series with a turn-off PMOS/NMOS
switch. The resistance of this PMOS/NMOS switch is very small.



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