FN6406 Rev 1.00

Page 4 of 13

Sep 28, 2018

ISL59910, ISL59913

IMPORTANT NOTE: All parameters having Min/Max specifications are ensured. Typ values are for information purposes only. Unless otherwise noted, all tests are at

the specified temperature and are pulsed tests, therefore: TJ = TC = TA

Absolute Maximum Ratings (TA = +25°C)

Operating Conditions

Supply Voltage between VS+ and VS-. . . . . . . . . . . . . . . . . . . . .12V

Maximum Continuous Output Current per Channel. . . . . . . . . 30mA

Power Dissipation . . . . . . . . . . . See “Typical Performance Curves”

Pin Voltages . . . . . . . . . . . . . . . . . . . . . . . . . VS- -0.5V to VS+ +0.5V

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C

Die Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” can permanently damage the device. This is a stress only rating and operation of the device at

these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications

VSA+ = VA+ = +5V, VSA- = VA- = -5V, TA = +25°C, exposed die plate = -5V, unless otherwise specified.

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

AC PERFORMANCE

Bandwidth

BW

(See Figure 1)

150

MHz

Slew Rate

SR

VIN = -1V to +1V, VG = 0.39, VC = 0,

RL = 75 + 75

1.5

kV/µs

Total Harmonic Distortion

THD

10MHz 2VP-P out, VG = 1V, X2 gain,

VC =0

-50

dBc

DC PERFORMANCE

Offset Voltage

V(VOUT)OS

X2 = high, no equalization

-110

-15

+110

mV

Channel-to-Channel Offset Matching

VOS

X2 = high, no equalization

-140

0

+140

mV

INPUT CHARACTERISTICS

Common-Mode Input Range

CMIR

-4/+3.5

V

Output Noise

ONOISE

VG = 0V, VC = 0V, X2 = HIGH,

RLOAD = 150Ω Input 50Ω to GND,

10MHz

-110

dBm

Common-Mode Rejection Ratio

CMRR

Measured at 10kHz

-80

dB

Common-Mode Rejection Ratio

CMRR

Measured at 10MHz

-55

dB

CM Amplifier Bandwidth

CMBW

10k || 10pF load

50

MHz

CM Slew Rate

CMSLEW

Measured at +1V to -1V

100

V/µs

Differential Input Capacitance

CINDIFF

Capacitance VINP to VINM

600

fF

Differential Input Resistance

RINDIFF

Resistance VINP to VINM

1MΩ

CM Input Capacitance

CINCM

Capacitance VINP = VINM to GND

1.2

pF

CM Input Resistance

RINCM

Resistance VINP = VINM to GND

1

MΩ

Positive Input Current

+IIN

DC bias at VINP = VINM = 0V

1

µA

Negative Input Current

-IIN

DC bias at VINP = VINM = 0V

1

µA

Differential Input Range

VINDIFF

VINP - VINM when slope gain falls to 0.9

2.5

V

OUTPUT CHARACTERISTICS

Output Voltage Swing

V(VOUT)RL = 150Ω

±3.5

V

Output Drive Current

I(VOUT)RL = 10Ω, VINP = 1V, VINM = 0V,

X2 = high, VG = 0.39

50

60

mA

CM Output Resistance of

VCM_R/G/B (ISL59913 only)

R(VCM)

At 100kHz

30

Ω

Gain

Gain

VC = 0, VG = 0.39, X2 = 5, RL = 150Ω

0.85

1.0

1.1

Channel-to-Channel Gain Matching

Gain at DC

VC = 0, VG = 0.39, X2 = 5, RL = 150Ω

3

8

%

Channel-to-Channel Gain Matching

Gain at

15MHz

VC = 0.6, VG = 0.39, X2 = 5, RL = 150Ω,

Frequency = 15MHz

311

%