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M58LW032 数据表(PDF) 40 Page - STMicroelectronics

部件名 M58LW032
功能描述  32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
PDF  61 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58LW032 数据表(HTML) 40 Page - STMicroelectronics

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Figure 19. Synchronous Burst Read - Continuous - Valid Data Ready Output
Note: 1. Valid Data Ready = Valid Low during valid clock edge (M8 = 0)
2. V= Valid output, NV= Not Valid output.
3. R is an open drain output with an internal pull up resistor of 1M
Ω. Depending on the Valid Data Ready pin capacitance load an
external pull up resistor must be chosen according to the system clock period.
Table 20. Synchronous Burst Read AC Characteristics
Note: For other timings see Table 15, Asynchronous Bus Read Characteristics.
Symbol
Parameter
Test Condition
M58LW032A
Unit
90
110
tAVKH
Address Valid to Active Clock Edge
E = VIL
Min
7
7
ns
tAVLH
Address Valid to Latch Enable High
E = VIL
Min
10
10
ns
tELKH
Chip Enable Low to Active Clock Edge
E = VIL
Min
10
10
ns
tELLH
Chip Enable Low to Latch Enable High
E = VIL
Min
10
10
ns
tGLKH
Output Enable Low to Valid Clock Edge
E = VIL, L = VIH
Min
20
20
ns
tKHAX
Valid Clock Edge to Address Transition
E = VIL
Min
5
5
ns
tKHLL
Valid Clock Edge to Latch Enable Low
E = VIL
Min
0
0
ns
tKHLH
Valid Clock Edge to Latch Enable High
E = VIL
Min
0
0
ns
tKHQX
Valid Clock Edge to Output Transition
E = VIL, G = VIL, L = VIH
Min
3
3
ns
tLLKH
Latch Enable Low to Valid Clock Edge
E = VIL
Min
6
6
ns
tLLLH
Latch Enable Low to Latch Enable High
E = VIL
Min
6
6
ns
tKHQV
Valid Clock Edge to Output Valid
E = VIL, G = VIL, L = VIH
Max
10
10
ns
tQVKH
Output Valid to Active Clock Edge
E = VIL, G = VIL, L = VIH
Min
5
5
ns
tRLKH
Valid Data Ready Low to Valid Clock Edge
E = VIL, G = VIL, L = VIH
Min
5
5
ns
AI05510
K
Output (2)
V
V
NV
NV
V
V
tRLKH
R
V
(3)



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