M58LW032 datasheet(47/61 Pages) STMICROELECTRONICS

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M58LW032A

Table 28. CFI - Device Voltage and Timing Specification

Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.

2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.

3. Not supported.

Table 29. Device Geometry Definition

Address A21-A1

Data

Description

1Bh

27h (1)

VDD Min, 2.7V

1Ch

36h (1)

VDD max, 3.6V

1Dh

00h (2)

VPP min – Not Available

1Eh

00h (2)

VPP max – Not Available

1Fh

04h

2n µs typical time-out for Word, DWord prog – Not Available

20h

08h

2n µs, typical time-out for max buffer write

21h

0Ah

2n ms, typical time-out for Erase Block

22h

00h (3)

2n ms, typical time-out for chip erase – Not Available

23h

04h

2n x typical for Word Dword time-out max – Not Available

24h

04h

2n x typical for buffer write time-out max

25h

04h

2n x typical for individual block erase time-out maximum

26h

00h (3)

2n x typical for chip erase max time-out – Not Available

Address A21-A1

Data

Description

27h

16h

n where 2n is number of bytes memory Size

28h

29h

01h

00h

Device Interface

2Ah

05h

Maximum number of bytes in Write Buffer, 2n

2Bh

00h

2Ch

01h

Bit7-0 = number of Erase Block Regions in device

2Dh

3Fh

Number (n-1) of Erase Blocks of identical size; n=64

2Eh

00h

2Fh

00h

Erase Block Region Information

x 256 bytes per Erase block (128K bytes)

30h

01h

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