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M59DR032A 数据表(PDF) 13 Page - STMicroelectronics |
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M59DR032A 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 38 page ![]() 13/38 M59DR032A, M59DR032B Table 14B. Instructions (1,2) Note: 1. Commands not interpreted in this table will default to read array mode. 2. For Coded cycles address inputs A11-A20 are don’t care. 3. X = Don’t Care. 4. The first cycles of the RD or AS instructions are followed by read operations. Any number of read cycles can occur after the com- mand cycles. 5. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased. 6. Program Address 1 and Program Address 2 must be consecutive addresses differing only for address bit A0. 7. High voltage on VPP (11.4V to 12.6V) is required for the proper execution of the Double Word Program instruction. Mne. Instr. Cyc. 1st Cyc. 2nd Cyc. 3rd Cyc. 4th Cyc. 5th Cyc. 6th Cyc. BL Block Lock 4 Addr. 555h 2AAh 555h Block Address Data AAh 55h 60h 2Fh BE Block Erase 6+ Addr. 555h 2AAh 555h 555h 2AAh Block Address Data AAh 55h 80h AAh 55h 30h BKE Bank Erase 6 Addr. 555h 2AAh 555h 555h 2AAh Bank Address Data AAh 55h 80h AAh 55h 10h ES Erase Suspend 1 Addr. (3) X Read until Toggle stops, then read all the data needed from any Blocks not being erased then Resume Erase. Data B0h ER Erase Resume 1 Addr. Bank Address Read Data Polling or Toggle Bits until Erase completes or Erase is suspended another time Data 30h |
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