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M59DR016 数据表(PDF) 21 Page - STMicroelectronics

部件名 M59DR016
功能描述  16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
PDF  37 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M59DR016 数据表(HTML) 21 Page - STMicroelectronics

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M59DR016C, M59DR016D
Table 25. Read AC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Symbol
Alt
Parameter
Test Condition
M59DR016
Unit
100
120
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next
Address Valid
E = VIL, G = VIL
100
120
ns
tAVQV
tACC
Address Valid to Output
Valid (Random)
E = VIL, G = VIL
100
120
ns
tAVQV1
tPAGE
Address Valid to Output
Valid (Page)
E = VIL, G = VIL
35
45
ns
tELQX
(1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
00
ns
tELQV
(2)
tCE
Chip Enable Low to Output
Valid
G = VIL
100
120
ns
tGLQX
(1)
tOLZ
Output Enable Low to
Output Transition
E = VIL
00
ns
tGLQV
(2)
tOE
Output Enable Low to
Output Valid
E = VIL
25
35
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output
Hi-Z
G = VIL
25
35
ns
tGHQX
tOH
Output Enable High to
Output Transition
E = VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to
Output Hi-Z
E = VIL
25
35
ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
00
ns
tPHQ7V1
RP High to Data Valid
(Read Mode)
150
150
ns
tPHQ7V2
RP High to Data Valid
(Power Down enabled)
50
50
µs
tPLQ7V
RP Low to Reset Complete
During Program/Erase
15
µs
tPLPH
tRP
RP Pulse Width
100
100
ns



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