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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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RA4E1 数据表(PDF) 24 Page - Renesas Technology Corp |
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RA4E1 数据表(HTML) 24 Page - Renesas Technology Corp |
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24 / 81 page  Under development Preliminary document Specifications in this document are tentative and subject to change RA4M3 Series 59. Electrical Characteristics xx xx, 2019 RA4M2 Starget Spec Page 10 of 2123 Figure 47.4 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB resume detecting unit, power-on reset circuit low power function disabled (reference data) Figure 47.5 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB resume detecting unit, power-on reset circuit low power function enabled (reference data) 1 10 100 -40 -20 0 204060 80 100 Ta (℃) Average value of the tested middle samples during product evaluation. Average value of the tested upper-limit samples during product evaluation. 1 10 100 -40 -20 0 204060 80 100 Ta (℃) Average value of the tested middle samples during product evaluation. Average value of the tested upper-limit samples during product evaluation. Figure 2.4 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB resume detecting unit, power-on reset circuit low power function disabled (reference data) Under development Preliminary document Specifications in this document are tentative and subject to change RA4M3 Series 59. Electrical Characteristics xx xx, 2019 RA4M2 Starget Spec Page 10 of 2123 Figure 47.4 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB resume detecting unit, power-on reset circuit low power function disabled (reference data) Figure 47.5 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB resume detecting unit, power-on reset circuit low power function enabled (reference data) 1 10 100 -40 -20 0 204060 80 100 Ta (℃) Average value of the tested middle samples during product evaluation. Average value of the tested upper-limit samples during product evaluation. 1 10 100 -40 -20 0 204060 80 100 Ta (℃) Average value of the tested middle samples during product evaluation. Average value of the tested upper-limit samples during product evaluation. Figure 2.5 Temperature dependency in Deep Software Standby mode, power not supplied to SRAM or USB resume detecting unit, power-on reset circuit low power function enabled (reference data) 2.2.6 VCC Rise and Fall Gradient and Ripple Frequency Table 2.9 Rise and fall gradient characteristics Parameter Symbol Min Typ Max Unit Test conditions VCC rising gradient Voltage monitor 0 reset disabled at startup SrVCC 0.0084 — 20 ms/V — Voltage monitor 0 reset enabled at startup 0.0084 — — — SCI/USB boot mode*1 0.0084 — 20 — VCC falling gradient*2 SfVCC 0.0084 — — ms/V — Note 1. At boot mode, the reset from voltage monitor 0 is disabled regardless of the value of the OFS1.LVDAS bit. Note 2. This applies when VBATT is used. RA4E1 Datasheet 2. Electrical Characteristics R01DS0391EJ0130 Rev.1.30 Jun 6, 2025 Page 24 of 81 |
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