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db05175e_V3.01_preliminary_2017-07-06

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AS89000

V3.01

PARAMETER

NAME

MIN

TYP

MAX

UNIT

CONDITION

signal frequency at

input

SW4 = VDD

(CPHOTO-SESNOR < 5pF)

f3dB

14

21

45

kHz

stage 3, TOP (4.2 )

35

54

130

kHz

stage 4, TOP (4.2 )

70

110

260

kHz

stage 5, TOP (4.2 )

100

160

360

kHz

stage 6, TOP (4.2 )

260

380

780

kHz

stage 7, TOP (4.2 )

500

800

1700

kHz

stage 8, TOP (4.2 )

temperature coefficient

of the feedback

resistor3

TCR

-3300

ppm/K

offset voltage

VOFF4

-10

10

mV

TOP (4.2 )

capacitive load at

VOUT<X>

CLOAD

50

pF

ILOAD < 0.5 mA per output

pull down current SW1,

SW2, SW3, SW4, PD

IPDPAD

200

µA

digital inputs

input capacitance of

external connected

photo-sensors

CPHOTO-

SENSOR

80

pF

per input

SW4 = GND

input capacitance of

external connected

photo-sensors

CPHOTO-

SENSOR

5

pF

per input

SW4 = VDD

tolerance of the

feedback resistors

between the four

channels

TOLR5

1

10

%

DC input current;

for all stages

3 see also chapter 6.2

4 VOFF = VOUT<X> - VREF; results from input offset voltage and input leakage current

5 up to max. 1% available on request