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MDS35 数据表(PDF) 1 Page - STMicroelectronics

部件名 MDS35
功能描述  DIODE / SCR MODULE
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MDS35 数据表(HTML) 1 Page - STMicroelectronics

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MDS35/ 50 / 80Series
DIODE / SCR MODULE
December 2000 - Ed: 4
MAIN FEATURES:
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits,
welding
equipment,
motor
speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
Symbol
Value
Unit
IT(RMS)
50-70-85
A
VDRM/VRRM
800 and 1200
V
IGT
50 and 100
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
35
50
80
IT(RMS)
RMS on-state current
50
70
85
A
IT(AV)
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
Tc = 85°C
253555
A
ITSM
IFSM
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 8.3 ms
Tj = 25°C
420
630
730
A
tp = 10 ms
400
600
700
I
²tI²t Value for fusing
tp = 10 ms
Tj = 25°C
800 1800 2450
A2S
dI/dt
Critical rate of rise of on-state current
IG =2 x IGT ,tr ≤ 100 ns
F = 60 Hz
Tj = 125°C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125°C
4
A
PG(AV)
Average gate power dissipation
Tj = 125°C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40to+ 150
- 40to+ 125
°C
VRGM
Maximum peak reverse SCR gate voltage
5
V
ISOTOP®
ISOTOP is a registred trademark of STMicroelectronics
PIN CONNECTIONS


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