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MDS35 数据表(PDF) 5 Page - STMicroelectronics |
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MDS35 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 7 page ![]() MDS35 / 50 / 80 Series 5/7 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5-1: Surge peak on-state current versus number of cycles (MDS35 and MDS50). Fig. 5-2: Surge peak on-state current versus number of cycles (MDS80). Fig. 6-1: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (MDS35 and MDS50). Fig. 6-2: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t (MDS80). |
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