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MJ2501 数据表(PDF) 1 Page - STMicroelectronics |
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MJ2501 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN type is the MJ3001. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit PNP MJ2501 NPN MJ3001 VCBO Collector-base Voltage (IE = 0) 80 V VCEO Collector-emitter Voltage (IB = 0) 80 V VEBO Emitter-base Voltage (IC = 0) 5 V IC Collector Current 10 A IB Base Current 0.2 A Ptot Total Dissipation at Tc ≤ 25 oC 150 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC For PNP types voltage and current values are negative. 1 2 TO-3 R1 Typ. = 10 K Ω R2 Typ. = 150 Ω 1/4 |
类似零件编号 - MJ2501 |
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类似说明 - MJ2501 |
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