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TDA7571 数据表(PDF) 15 Page - STMicroelectronics |
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TDA7571 数据表(HTML) 15 Page - STMicroelectronics |
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15 / 21 page ![]() TDA7571 Functions, pins and components description 15/21 4.3 Internal thermal protection network The purpose of this function is to sense the chip temperature. Because of the power dissipation of this device is almost constant (is not dependent by the output power), the system must be designed to avoid chip temperature higher than 140 °C. The internal thermal protection is intended to avoid dangerous situations due to, as example, damaged power transistors (gate-source shorted) or bad environments conditions. Through the internal thermal warning pin (THWINT, pin 36), a signal useful to switch-off the system or, at least, reduce the power dissipation reducing (as example) the output power and/or, in a system provided of regulated power supply, reducing the voltage supply of the amplifier (±Vs) is present. 4.4 Feedback The resistors Rgain-L1, Rgain-L2 for the Left channel and Rgain-R1, Rgain-R2 for the Right channel defines the output AC voltage with a specific input digital data. In the example, with 3.9Kohm and 1kohm, as shown in the schematic, the output voltage @ input = -6dBFS, is indicated in the Main characteristics description. These values are needed to reach the clipping with 0dBFS input digital data and Vs = ±25V. If different power supply values are used, different resistors can be used to guarantee the clipping (then the output power), optimizing the signal to noise ratio. If Vsmax is the maximum power supply at which the amplifier must goes into clipping condition, the value of Rgain-X1 is given by: Considering Rgain-X2 = 1kohm, the relation become: As example, if Vsmax = ±20V, Rgain - L1 = Rgain - R1 = 2.92kohm ~= 3kohm 4.5 Gate driving network The main purpose of the 27 ohm resistors Rd-N-L, Rd-P-L, Rd-N-R and Rd-P-R are the following: 1. Dumping of the L-C equivalent circuit done by the parasitic inductance and capacitance present in the circuit 2. Reduction of the dv/dt of the Vgs and then reduction of the di/dt of the drain current of the power MOS. The R-C snubber network done by: Rs-N-L, Cs-N-L R gain X1 – V smax Rgain X2 – 5.1 R gain X2 – ⋅ – ⋅ () 5.1 ---------------------------------------------------------------------------------------------------- – R gain X1 – V smax 5.1 – () 5.1 ------------------------------------ = |
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