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SIM6892MS 数据表(PDF) 32 Page - Sanken electric |
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SIM6892MS 数据表(HTML) 32 Page - Sanken electric |
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32 / 55 page ![]() SIM689xM Series SIM689xM-DSE Rev.3.4 SANKEN ELECTRIC CO., LTD. 32 Mar. 05, 2024 https://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2021 14.2.3 Body Diode Steady-state Loss, PSD Steady-state loss in the body diode of a power MOSFET can be computed by using the VSD vs. ISD curves, listed in Section 15.3.1. As expressed by the curves in Figure 14-3, a linear approximation at a range the ISD is actually used is obtained by: VSD = α × ISD + β. The values gained by the above calculation are then applied as parameters in Equation (9), below. Hence, the equation to obtain the body diode steady-state loss, PSD, is: PSD = 1 2π ∫ VSD (φ) × ISD(φ) × (1 − DT) × dφ π 0 = 1 2 α ( 1 2 − 4 3π M × cos θ) IM 2 + √2 π β ( 1 2 − π 8 M × cos θ) IM . (9) Where: VSD is the source-to-drain diode forward voltage of the power MOSFET (V), ISD is the source-to-drain diode forward current of the power MOSFET (A), DT is the duty cycle, which is given by DT = 1 + M × sin(φ + θ) 2 , M is the modulation index (0 to 1), cosθ is the motor power factor (0 to 1), IM is the effective motor current (A), α is the slope of the linear approximation in the VSD vs. ISD curve, and β is the intercept of the linear approximation in the VSD vs. ISD curve. Figure 14-3. Linear Approximate Equation of VSD vs. ISD 14.2.4 Estimating Junction Temperature of Power MOSFET The junction temperature of all power MOSFETs operating, TJ, can be estimated with Equation (10): TJ = RJ−C × {(PON + PSW + PSD) × 6} + TC . (10) Where: RJ-C is the junction-to-case thermal resistance (°C/W) of all the power MOSFETs operating, and TC is the case temperature (°C), measured at the point defined in Figure 3-1. y = 0.201x + 0.63 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.5 1.0 1.5 2.0 2.5 I SD (A) 125°C 75°C 25°C |
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