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SIM6892MS 数据表(PDF) 32 Page - Sanken electric

部件名 SIM6892MS
功能描述  600 V High Voltage 3-phase Motor Drivers
PDF  55 Pages
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制造商  SANKEN [Sanken electric]
网页  http://www.sanken-ele.co.jp/en
标志 SANKEN - Sanken electric

SIM6892MS 数据表(HTML) 32 Page - Sanken electric

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SIM689xM Series
SIM689xM-DSE Rev.3.4
SANKEN ELECTRIC CO., LTD.
32
Mar. 05, 2024
https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2021
14.2.3
Body Diode Steady-state Loss, PSD
Steady-state loss in the body diode of a power
MOSFET can be computed by using the VSD vs. ISD
curves, listed in Section 15.3.1. As expressed by the
curves in Figure 14-3, a linear approximation at a range
the ISD is actually used is obtained by: VSD = α × ISD + β.
The values gained by the above calculation are then
applied as parameters in Equation (9), below. Hence, the
equation to obtain the body diode steady-state loss, PSD,
is:
PSD =
1
∫ VSD (φ) × ISD(φ) × (1 − DT) × dφ
π
0
=
1
2
α (
1
2
4
M × cos θ) IM
2
+
√2
π
β (
1
2
π
8
M × cos θ) IM .
(9)
Where:
VSD is the source-to-drain diode forward voltage of the
power MOSFET (V),
ISD is the source-to-drain diode forward current of the
power MOSFET (A),
DT is the duty cycle, which is given by
DT =
1 + M × sin(φ + θ)
2
,
M is the modulation index (0 to 1),
cosθ is the motor power factor (0 to 1),
IM is the effective motor current (A),
α is the slope of the linear approximation in the VSD vs.
ISD curve, and
β is the intercept of the linear approximation in the VSD
vs. ISD curve.
Figure 14-3.
Linear Approximate Equation of
VSD vs. ISD
14.2.4
Estimating Junction Temperature
of Power MOSFET
The junction temperature of all power MOSFETs
operating, TJ, can be estimated with Equation (10):
TJ = RJ−C × {(PON + PSW + PSD) × 6} + TC .
(10)
Where:
RJ-C is the junction-to-case thermal resistance (°C/W)
of all the power MOSFETs operating, and
TC is the case temperature (°C), measured at the point
defined in Figure 3-1.
y = 0.201x + 0.63
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.5
1.0
1.5
2.0
2.5
I
SD (A)
125°C
75°C
25°C



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