CHA2091

36-40GHz Low Noise Amplifier

Ref. DSCHA20917150 - 30 May 07.

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C,

Bias Conditions: Vd = +4V Id=45mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

36

40

Ghz

G

Gain (1)

12

14

dB

∆G

Gain flatness (1)

± 0.5

± 1.0

dB

NF

Noise figure (1)

2.5

3.5

dB

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Ouput VSWR (1)

3.0:1

IP3

3rd order intercept point

20

dBm

P1dB

Output power at 1dB gain compression

12

dBm

Id

Drain bias current

45

mA

(1) These values are representative of on-wafer measurements that are made without

bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and

output bonding wires, the indicated parameters should be improved.

Tamb = +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4.0

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Top

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.