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PD57070 数据表(PDF) 1 Page - STMicroelectronics |
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PD57070 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() 1/13 March, 21 2003 PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57070 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57070 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57070’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (formed lead) ORDER CODE PD57070 BRANDING PD57070 PowerSO-10RF (straight lead) ORDER CODE PD57070S BRANDING PD57070S ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ± 20 V ID Drain Current 7 A PDISS Power Dissipation (@ Tc = 70°C) 95 W Tj Max. Operating Junction Temperature 165 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA (TCASE =70 °C) Rth(j-c) Junction -Case Thermal Resistance 1.0 °C/W Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) |
类似零件编号 - PD57070 |
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类似说明 - PD57070 |
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