STTH10R04B datasheet(2/11 Pages) STMICROELECTRONICS

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Characteristics

STTH10R04

2/11

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.05 x IF(AV) + 0.03 IF

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

400

IF(RMS)

Forward current (rms)

IF(peak)

Peak working

forward current

DPAK, TO-220AC, D2PAK

Tc = 135 °C δ = 0.5

Square signal

TO-220FPAC

Tc = 130 °C δ = 0.5

Square signal

IFSM

Surge non-repetitive forward current

tp = 10 ms sinusoidal

100

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

DPAK, TO-220AC, D2PAK

3.5

°C/W

TO-220FPAC

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

100

(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

1.5

1.7

Tj = 125 °C

1.15

1.35

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

Table 5.

Recovery characteristics

Symbol

Parameter

Test conditions

Min Typ Max Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR = 1 A

IF = 1 A, VR = 30 V, dIF/dt = -50 A/µs

tfr

Forward recovery time

Tj = 25 °C

IF = 10 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

140

VFP

Peak forward voltage

Tj = 25 °C

IF = 10 A , dIF/dt = 100 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 10 A, VCC = 200 V

dIF/dt = 200 A/µs

6.2

Sfactor

Softness factor

0.3

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