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STTH10R04B 数据表(PDF) 5 Page - STMicroelectronics |
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STTH10R04B 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() STTH10R04 Characteristics 5/11 Figure 11. Forward recovery time versus dIF/dt (typical values) Figure 12. Junction capacitance versus reverse voltage applied (typical values) 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450 500 I F=IF(AV) V FR=1.1 x VF max. T j=125°C dI /dt(A/µs) F t (ns) fr 10 100 1 10 100 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25°C VR(V) Figure 13. Thermal resistance, junction to ambient, versus copper surface under tab (epoxy printed board FR4, copper thickness = 35 µm) D2PAK Figure 14. Thermal resistance, junction to ambient, versus copper surface under tab (epoxy printed board FR4, copper thickness = 35 µm) DPAK 0 10 20 30 40 50 60 70 80 05 10 15 20 2530 35 40 R th(j-a)(°C/W) D²PAK SCU(cm²) 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 R th(j-a)(°C/W) DPAK SCU(cm²) |
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