PBYR2545CTB datasheet(3/5 Pages) NXP

3 / 5 page

Philips Semiconductors

Product specification

Rectifier diodes

PBYR2545CTB series

schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

PBYR1645

IF(AV) / A

PF / W

D = 1.0

0.5

0.2

0.1

150

142.5

135

127.5

Tmb(max) / C

D =

Vo = 0.302

Rs = 0.012

100

0.1

0.01

IR / mA

VR/ V

PBYR1645

75 C

100 C

125 C

150 C

Tj = 50 C

a = 1.57

1.9

2.8

PBYR1645

IF(AV) / A

PF / W

Tmb(max) / C

150

147

144

141

138

135

132

2.2

Vo = 0.302

Rs = 0.012

100

10000

1000

Cd / pF

VR / V

PBYR1645

0.2

0.4

0.6

0.8

1.2

1.4

PBYR1645

VF / V

IF / A

Tj = 25 C

Tj = 125 C

typ

max

0.1

0.01

10us

1ms

0.1s

10s

tp / s

Zth j-mb (K/W)

August 1996

Rev 1.000

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