Philips Semiconductors

Product specification

Rectifier diodes

PBYR2545CTB series

schottky barrier

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual low leakage, platinum barrier,

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

schottky rectifier diodes in a plastic

envelope

suitable

for

surface

PBYR25-

35CTB 40CTB 45CTB

mounting,

featuring

low

forward

V

RRM

Repetitive peak reverse

35

40

45

V

voltage drop, absence of stored

voltage

charge. and guaranteed reverse

V

F

Forward voltage

0.62

0.62

0.62

V

surge capability. The devices are

I

O(AV)

Average output current

30

30

30

A

intended for use in switched mode

(both diodes conducting)

power supplies and high frequency

circuits

in

general

where

low

conduction and zero switching losses

are important.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

anode 1

2

cathode

3

anode 2

mb

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-35

-40

-45

V

RRM

Repetitive peak reverse voltage

-

35

40

45

V

V

RWM

Crest working reverse voltage

-

60

80

100

V

V

R

Continuous reverse voltage

T

-

35

40

45

V

I

O(AV)

Average output current (both

square wave;

δ = 0.5;

-

30

A

diodes conducting)

T

I

O(RMS)

RMS output current (both

-

43

A

diodes conducting)

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

135

A

current, per diode

t = 8.3 ms

-

150

A

sinusoidal T

to surge; with reapplied

V

RRM(max)

I

t = 10 ms

-

91

A

I

RRM

Repetitive peak reverse current t

-

1

A

per diode.

I

RSM

Non-repetitive peak reverse

t

1

A

current per diode.

T

stg

Storage temperature

-65

175

˚C

T

j

Operating junction temperature

-

150

˚C

13

mb

2

k

a1

a2

1

2

3

August 1996

1

Rev 1.000