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L8229 数据表(PDF) 13 Page - STMicroelectronics |
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L8229 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 42 page ![]() Obsolete Product(s) - Obsolete Product(s) L8229 L6219_HI and L6219_8 modes 13/42 4 L6219_HI and L6219_8 modes When configured in one of these modes the device has a functionality similar to ST L6219 with some improvements. The output stage is made by LDMOS devices instead of the BJT present in ST L6219. This allows a reduced saturation drop and an higher current handling with similar power dissipation. Additionally the recirculation diodes are internally available as a part of the LDMOS structure. In case of: a) Undervoltage detection (UVD) or b) Thermal shutdown (TSD), the outputs will be in Hi-Z mode (all outputs off) respectively until the supplies voltage goes over the UV threshold plus hysteresis or the themperature decreases below TSD threshold minus hysteresis. In case of: c) Overcurrent detection (OCD) the outputs will be in Hi-Z mode (all outputs off) and will remain in this condition until the device is reset by turning off and on VCC supply voltage. Common electrical characteristics of both L6219_HI and L6219_8 modes are listed below, while specific characteristics are listed in their respective functionality descriptions. |
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