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STB200N4F3 数据表(PDF) 1 Page - STMicroelectronics |
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STB200N4F3 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() October 2007 Rev 2 1/14 14 STP200N4F3 STB200N4F3 N-channel 40V - 0.0035 Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET Features ■ 100% avalanche tested ■ Standard threshold drive Applications ■ Switching applications – Automotive Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. Figure 1. Internal schematic diagram Type VDSS RDS(on) Max ID Pw STB200N4F3 40V <0.0040 Ω 120A 300W STP200N4F3 40V <0.0044 Ω 120A 300W 1 3 D²PAK 1 2 3 TO-220 Table 1. Device summary Order codes Marking Package Packaging STB200N4F3 200N4F3 D²PAK Tape & reel STP200N4F3 200N4F3 TO-220 Tube www.st.com |
类似零件编号 - STB200N4F3 |
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类似说明 - STB200N4F3 |
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